advanced power dual n-channel enhancement electronics corp. mode power mosfet simple drive requirement ch-1 bv dss 30v fast switching performance r ds(on) 6.2m two independent device i d 72a halogen free & rohs compliant product ch-2 bv dss 30v r ds(on) 10m description i d 45a absolute maximum ratin g s symbol rating units channel-2 v ds drain-source voltage 30 v v gs gate-source voltage + 20 v i d @t c =25 45 a i d @t a =25 continuous drain current 3 14.1 a i d @t a =70 continuous drain current 3 11.2 a i dm pulsed drain current 1 60 a p d @t a =25 total power dissipation w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-c (ch-1) maximum thermal resistance, junction-case 2.5 /w rthj-c (ch-2) maximum thermal resistance, junction-case 4.0 /w rthj-a maximum thermal resistance, junction-ambient 3 42 /w data and specifications subject to change without notice 20090420pre 1 continuous drain current 72 14 thermal data parameter 72 3 AP6900GH-HF preliminary parameter channel-1 30 + 20 18 g2 d2 s2 g1 d1 s1 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 sdpak tm g1 s2 g2 d1 (tab1) d2 (tab2) sdpak tm used apec innovated package and provides two independent device that is suitable and optimum for dc/dc power application.
ch-1 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =18a - - 6.2 m ? v gs =4.5v, i d =12a - - 12.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 32 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =18a - 10 16 nc q gs gate-source charge v ds =24v - 2.5 nc q gd gate-drain ("miller") charge v gs =4.5v - 5.5 nc t d(on) turn-on delay time 2 v ds =15v - 7 - ns t r rise time i d =18a - 60 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 18 - ns t f fall time r d =0.833 -5- ns c iss input capacitance v gs =0v - 945 1510 pf c oss output capacitance v ds =25v - 295 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 1.3 2 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.5a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0 v , - 30 - ns q rr reverse recovery charge di/dt=100a/s - 27 - nc 2 AP6900GH-HF
AP6900GH-HF ch-2 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 10 m ? v gs =4.5v, i d =8a - - 22 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =12a - 30 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =12a - 5.7 9.2 nc q gs gate-source charge v ds =24v - 1.4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.2 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =12a - 56 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 14 - ns t f fall time r d =1.25 - 3.5 - ns c iss input capacitance v gs =0v - 505 810 pf c oss output capacitance v ds =25v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 2.6 4 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.5a, v gs =0v - - 1.2 v t rr reverse recovery time 2 is=10a, v gs =0 v , - 24 - ns q rr reverse recovery charge di/dt=100a/s - 18 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.rthja is determined with the device, mounted on 2oz fr4 board t Q 10s. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3
AP6900GH-HF channel-1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 20 40 60 80 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 20 40 60 80 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 5 7 9 11 13 246810 v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =12a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
AP6900GH-HF channel-1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 5 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 048121620 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =1 5 v v ds =18v v ds =24v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =75 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
AP6900GH-HF channel-2 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 10 20 30 40 50 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 10 20 30 40 50 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 8 12 16 20 24 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
AP6900GH-HF channel-2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0246810 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12 a v ds =15v v ds =18v v ds =24v 0 200 400 600 800 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm t t 0.02 0.02 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 duty factor = t/t peak t j = p dm x r thja + t a r thja =75 o c/w 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
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